DocumentCode
1050029
Title
Applications of the electron beam exposure system
Author
Pease, R. W F ; Ballantyne, Peter J. ; Henderson, Richard C. ; Voshchenkov, Alexander M. ; Yau, Leopoldo D.
Author_Institution
Bell Laboratories, Murray Hill, N. J.
Volume
22
Issue
7
fYear
1975
fDate
7/1/1975 12:00:00 AM
Firstpage
393
Lastpage
399
Abstract
Successful application of high-speed scanning electron lithography machines such as the electron beam exposure system (EBES) requires the development of suitable materials and processes. We describe how electron resists with improved sensitivity have been used to make high-quality photolithographic master masks in which 1-µm lines and spaces are resolved and also to make MOS integrated circuits with improved packing density and performance.
Keywords
Chemicals; Chromium; Electron beams; Error correction; Fabrication; Inspection; Lithography; MOS integrated circuits; Resists; Throughput;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1975.18150
Filename
1477985
Link To Document