Title :
SONOS-type flash memory using an HfO/sub 2/ as a charge trapping layer deposited by the sol-gel spin-coating method
Author :
You, Hsin-Chiang ; Hsu, Tze-Hsiang ; Ko, Fu-Hsiang ; Huang, Jiang-Wen ; Yang, Wen-Luh ; Lei, Tan-Fu
Author_Institution :
Inst. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu
Abstract :
In this letter, the authors fabricate the silicon-oxide-nitride-oxide-silicon (SONOS)-like memory using an HfO2 as charge trapping layer deposited by a very simple sol-gel spin-coating method and 900 degC 1-min rapid thermal annealing. They examine the quality of sol-gel HfO2 charge trapping layer by X-ray photoemission spectroscopy, Id-Vg, charge retention, and endurance. The threshold voltage shift is 1.2 V for the sol-gel HfO2 trapping layer. The sol-gel HfO2 film can form a deep trap layer to trap electrons for the SONOS-like memory. Therefore, the sol-gel device exhibits the long charge retention time and good endurance performance. The charge retention time is 104 s with only 6% charge loss and long endurance program/erase cycles up to 105
Keywords :
X-ray photoelectron spectra; flash memories; hafnium compounds; rapid thermal annealing; sol-gel processing; spin coating; 1 min; 1.2 V; 104 s; 900 C; HfO2; SONOS-type flash memory; X-ray photoemission spectroscopy; charge retention; charge trapping layer; rapid thermal annealing; silicon-oxide-nitride-oxide-silicon; sol-gel spin-coating; Coatings; Electron traps; Flash memory; Hafnium oxide; Material storage; Nonvolatile memory; SONOS devices; Silicon; Transistors; Tunneling; Charge retention; endurance; silicon–oxide–nitride–oxide–silicon (SONOS)-like memory; sol–gel spin coating;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.879026
