UV photo-responsive characteristics of an n-channel GaN Schottky-barrier MISFET for UV image sensors

Author

Lee, Heon-Bok ; An, Hyun-Su ; Cho, Hyun-Ick ; Lee, Jung-Hee ; Hahm, Sung-Ho

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., Kyungpook Nat. Univ., Daegu

Volume

27

Issue

8

fYear

2006

Firstpage

656

Lastpage

658

Abstract

The ultraviolet (UV) responsive properties of the enhancement-mode n-channel Schottky-barrier MISFET (SB-MISFET), which was fabricated on a p-type GaN layer grown on silicon substrate, were investigated. The drain leakage current of the MISFET is less than 1 nA/mm², which is quite low compared to recently reported photodetectors. The MISFET exhibited a cutoff wavelength of 365 nm, and the UV/visible rejection ratio was about 120 near the threshold voltage. This is the first demonstration of the MISFET-type UV photodetector, which is highly applicable to the UV image sensors

Keywords

III-V semiconductors; MISFET; Schottky barriers; gallium compounds; image sensors; leakage currents; photodetectors; semiconductor growth; ultraviolet detectors; wide band gap semiconductors; 365 nm; GaN; UV image sensors; UV photoresponsive characteristics; drain leakage current; enhancement-mode n-channel Schottky barrier MISFET; photodetectors; silicon substrate; Aluminum gallium nitride; Dielectric substrates; Epitaxial layers; Gallium nitride; Image sensors; Leakage current; MISFETs; Photodetectors; Schottky barriers; Silicon; GaN; MISFET; Schottky barrier; ultraviolet (UV) photodetector;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.879044

Filename

1661721