Title :
UV photo-responsive characteristics of an n-channel GaN Schottky-barrier MISFET for UV image sensors
Author :
Lee, Heon-Bok ; An, Hyun-Su ; Cho, Hyun-Ick ; Lee, Jung-Hee ; Hahm, Sung-Ho
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Kyungpook Nat. Univ., Daegu
Abstract :
The ultraviolet (UV) responsive properties of the enhancement-mode n-channel Schottky-barrier MISFET (SB-MISFET), which was fabricated on a p-type GaN layer grown on silicon substrate, were investigated. The drain leakage current of the MISFET is less than 1 nA/mm2, which is quite low compared to recently reported photodetectors. The MISFET exhibited a cutoff wavelength of 365 nm, and the UV/visible rejection ratio was about 120 near the threshold voltage. This is the first demonstration of the MISFET-type UV photodetector, which is highly applicable to the UV image sensors
Keywords :
III-V semiconductors; MISFET; Schottky barriers; gallium compounds; image sensors; leakage currents; photodetectors; semiconductor growth; ultraviolet detectors; wide band gap semiconductors; 365 nm; GaN; UV image sensors; UV photoresponsive characteristics; drain leakage current; enhancement-mode n-channel Schottky barrier MISFET; photodetectors; silicon substrate; Aluminum gallium nitride; Dielectric substrates; Epitaxial layers; Gallium nitride; Image sensors; Leakage current; MISFETs; Photodetectors; Schottky barriers; Silicon; GaN; MISFET; Schottky barrier; ultraviolet (UV) photodetector;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.879044
