• DocumentCode
    1050084
  • Title

    Fabrication of silicon MOS devices using X-ray lithography

  • Author

    Bernacki, Stephen E. ; Smith, Henry I.

  • Author_Institution
    Massachusetts Institute of Technology, Lexington, Mass.
  • Volume
    22
  • Issue
    7
  • fYear
    1975
  • fDate
    7/1/1975 12:00:00 AM
  • Firstpage
    421
  • Lastpage
    428
  • Abstract
    This paper reports on the high-yield fabrication of silicon MOS transistors using X-ray lithography, measurements and annealing of fast surface states and oxide charges created by X-ray irradiation, and design considerations for submicrometer linewidth X-ray lithography on 7.5-cm diameter silicon wafers.
  • Keywords
    Aluminum; Annealing; Capacitance measurement; MOS capacitors; MOS devices; MOSFETs; Optical device fabrication; Optical devices; Silicon; X-ray lithography;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1975.18155
  • Filename
    1477990
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1050084