Correlating drain-current with strain-induced mobility in nanoscale strained CMOSFETs

The correlation between channel mobility gain (Deltamu), linear drain-current gain (DeltaI_dlin), and saturation drain-current gain (DeltaIdsat) of nanoscale strained CMOSFETs are reported. From the plots of DeltaI_dlin versus DeltaI_dsat and ballistic efficiency (Bsat,PSS), the ratio of source/drain parasitic resistance (R_SD,PSS) to channel resistance (R_CH,PSS) of strained CMOSFETs can be extracted. By plotting Deltamu versus DeltaI_dlin, the efficiency of Deltamu translated to DeltaI_dlin is higher for strained pMOSFETs than strained nMOSFETs due to smaller RSD,PSS-to-RCH,PSS ratio of strained pMOSFETs. It suggests that to exploit strain benefits fully, the RSD,PSS reduction for strained nMOSFETs is vital, while for strained pMOSFETs the DeltaI_dlin -to-Deltamu sensitivity is maintained until R_SD,PSS becomes comparable to/or higher than R_CH,PSS