Decoupling of cold-carrier effects in hot-carrier reliability assessment of HfO/sub 2/ gated nMOSFETs

Author

Park, Hokyung ; Choi, Rino ; Byoung Hun Lee ; Song, Seung-Chul ; Chang, Man ; Young, Chadwin D. ; Bersuker, Gennadi ; Lee, Jack C. ; Hwang, Hyunsang

Author_Institution

Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol.

Volume

27

Issue

8

fYear

2006

Firstpage

662

Lastpage

664

Abstract

To understand the intrinsic effect of a hot-carrier injection on high-kappa dielectrics free from concurrent cold-carrier trapping, the authors have investigated a hot-carrier-induced damage with channel hot-carrier stresses and substrate hot-carrier stress. Compared to substrate hot-carrier stress, the channel hot-carrier stress shows a more significant cold-carrier-injection effect. By using a detrapping bias, they were able to decouple the effect of cold-carrier trapping from the permanent trap generation induced by the hot-carrier injection. As channel hot-carrier stress bias was reduced, a portion of cold-carrier trapping increased and a portion of interface trap generation decreased

Keywords

MOSFET; hafnium compounds; high-k dielectric thin films; hot carriers; interface states; semiconductor device reliability; HfO₂; cold carrier effects decoupling; gated nMOSFET; high-K dielectrics; hot carrier injection; hot carrier reliability assessment; interface trap generation; CMOS technology; Dielectric materials; Dielectric substrates; Hafnium oxide; Hot carrier effects; Hot carrier injection; Hot carriers; MOSFETs; Materials science and technology; Stress; Channel hot carrier; cold-carrier trapping; decoupling; hafnium oxide;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.878041

Filename

1661723