DocumentCode :
1050111
Title :
Refueling: Preventing Wire Degradation due to Electromigration
Author :
Abella, Jaume ; Vera, Xavier ; Unsal, Osman S. ; Ergin, Oguz ; Gonzalez, Adriana ; Tschanz, James W.
Volume :
28
Issue :
6
fYear :
2008
Firstpage :
37
Lastpage :
46
Abstract :
Electromigration is a major source of wire and via failure. Refueling undoes EM for bidirectional wires and power/ground grids-some of a chip´s most vulnerable wires. Refueling exploits EM´s self-healing effect by balancing the amount of current flowing in both directions of a wire. It can significantly extend a wire´s lifetime while reducing the chip area devoted to wires.
Keywords :
electromigration; failure analysis; bidirectional wires; electromigration; power/ground grids; refueling; self-healing effect; wire degradation; wire failure; Current density; Degradation; Electromigration; Frequency; Integrated circuit interconnections; Process design; Temperature; Transistors; Voltage; Wire;
fLanguage :
English
Journal_Title :
Micro, IEEE
Publisher :
ieee
ISSN :
0272-1732
Type :
jour
DOI :
10.1109/MM.2008.92
Filename :
4731173
Link To Document :
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