Study of bending-induced strain effects on MuGFET performance

Author

Shin, Kyoungsub ; Xiong, Weize ; Cho, Chung Yeung ; Cleavelin, C. Rinn ; Schulz, Thomas ; Schruefer, Klaus ; Patruno, Paul ; Smith, Lee ; Liu, Tsu-Jae King

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, CA

Volume

27

Issue

8

fYear

2006

Firstpage

671

Lastpage

673

Abstract

The impact of stress induced by biaxial mechanical bending on multiple-gate FET (MuGFET) performance is studied. For relatively low levels of bending-induced surface strain (~ 0.1%), significant enhancements in the driving current can be achieved and maintained with gate-length scaling. This makes package strain a potentially attractive approach to enhancing MuGFET-based CMOS performance at low cost. For bending-induced strain, the enhancements in electron mobility and (110) hole mobility are well predicted by the piezoresistance model using the coefficients for bulk-Si, but the impact of stress on (100) hole mobility is more complex

Keywords

electron mobility; field effect transistors; hole mobility; piezoresistance; semiconductor device models; stress effects; MuGFET; bending-induced strain effects; biaxial mechanical bending; electron mobility; gate-length scaling; hole mobility; multiple-gate FET; package strain; piezoresistance model; CMOS technology; Capacitive sensors; Crystallization; Electron mobility; FETs; MOS devices; MOSFETs; Piezoresistance; Silicon; Stress; Mobility; multiple-gate FET (MuGFET); piezoresistance (PR); strained silicon;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.878047

Filename

1661726