• DocumentCode
    105014
  • Title

    Low-power 6-GHz wave-pipelined 8b x 8b multiplier

  • Author

    Saha, Ankita ; Pal, Debdas ; Chandra, Mahesh

  • Author_Institution
    Dept. of Electron. & Commun. Eng., Dr. B. C. Roy Eng. Coll., Durgapur, India
  • Volume
    7
  • Issue
    3
  • fYear
    2013
  • fDate
    May-13
  • Firstpage
    124
  • Lastpage
    140
  • Abstract
    In this study, a low-power, high-speed, layout-efficient 8b × 8b unsigned parallel multiplier based on pair-wise algorithm with wave-pipelining is introduced. Simplified interconnection and data propagation in forward direction with no feedback in pair-wise multiplication technique is the key to achieve high-performance wave-pipelined multiplier. In the proposed work, normal process complementary pass-transistor logic is used to build all the leaf cells of combinational block. The input/output registers are designed with high-performance pulse-triggered true single-phase clocking flip flop. Post-layout simulation with Taiwan Semiconductor Manufacturing Company Limited 0.18 μm single-poly double-metal complimentary metal oxide semiconductor technology using Tanner EDA V.13 shows that the proposed multiplier works at 6.25 GHz clock frequency and achieves the throughput of 6.25 billion multiplications per second with average power dissipation of 18.54 mW and overall latency of 3.24 ns at 25°C temperature and at 2 V supply rail.
  • Keywords
    CMOS logic circuits; flip-flops; low-power electronics; multiplying circuits; Tanner EDA V.13; data propagation; frequency 6.25 GHz; high-speed parallel multiplier; input/output registers; interconnection; layout-efficient parallel multiplier; leaf cells; low-power wave-pipelined 8b × 8b multiplier; normal process complementary pass-transistor logic; pair-wise algorithm; pair-wise multiplication technique; post-layout simulation; power 18.54 mW; power dissipation; pulse-triggered true single-phase clocking flip flop; single-poly double-metal complimentary metal oxide semiconductor technology; size 0.18 mum; temperature 25 degC; voltage 2 V; wave-pipelining;
  • fLanguage
    English
  • Journal_Title
    Circuits, Devices & Systems, IET
  • Publisher
    iet
  • ISSN
    1751-858X
  • Type

    jour

  • DOI
    10.1049/iet-cds.2012.0221
  • Filename
    6531696