An 8-GHz f/sub t/ carbon nanotube field-effect transistor for gigahertz range applications

Author

Bethoux, J.M. ; Happy, H. ; Dambrine, G. ; Derycke, V. ; Goffman, M. ; Bourgoin, J.P.

Author_Institution

Inst. d´´Electronique, de Microelectronique et de Nanotechnol., CNRS, Villeneuve d´´Ascq

Volume

27

Issue

8

fYear

2006

Firstpage

681

Lastpage

683

Abstract

In this letter, the authors report on the high-frequency (HF) performance of self-assembled carbon nanotube field-effect transistors. HF device structures including a large number of single-wall carbon nanotubes have been designed and optimized in order to establish a new state of the art. The device exhibits a current gain (|H₂₁| ²) cutoff frequency (f_t) of 8 GHz and a maximum stable gain value of 10 dB at 1 GHz, after de-embedding the access pads. Considering such results, nanotube-based circuits with gigahertz performance are now conceivable

Keywords

carbon nanotubes; microwave field effect transistors; self-assembly; 1 GHz; 10 dB; 8 GHz; access pads; carbon nanotube; cutoff frequency; field-effect transistor; high-frequency device; Aluminum; Atomic force microscopy; CNTFETs; Carbon nanotubes; FETs; Hafnium; Impedance; Scanning electron microscopy; Self-assembly; Topology; Carbon nanotube field-effect transistor (CNFET); gigahertz; high frequency (HF);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.879042

Filename

1661729