DocumentCode
1050268
Title
A computer simulation scheme for various solid-state devices
Author
Yu, Se Puan ; Tantraporn, Wirojana
Author_Institution
General Electric Research and Development Center, Schnectady, N. Y.
Volume
22
Issue
8
fYear
1975
fDate
8/1/1975 12:00:00 AM
Firstpage
515
Lastpage
522
Abstract
The main computational scheme for the determination of the device-circuit interaction and the internal dynamics of the solid-state device are described. Certain important details are separately discussed in Appendixes. A unique feature in the simulation is the boundary condition at the electrode, characterized here by an energy barrier. Formulated in this way, successful simulations of the Gunn diode, injection-controlled amplifier, IMPATT diode, TRAPATT condition, controlled-avalanche transit-time (CATT) triode, as well as other phenomena reported in the literature, have been demonstrated.
Keywords
Boundary conditions; Circuit simulation; Computational modeling; Computer simulation; Frequency; Gunn devices; Schottky diodes; Solid state circuits; Tuned circuits; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1975.18172
Filename
1478007
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