• DocumentCode
    1050410
  • Title

    Generation-recombination noise produced in the channel of JFET´s

  • Author

    Hiatt, C.F. ; Van Der, Ziel A. ; van Vliet, K.M.

  • Author_Institution
    University of Florida, Gainesville, Fla.
  • Volume
    22
  • Issue
    8
  • fYear
    1975
  • fDate
    8/1/1975 12:00:00 AM
  • Firstpage
    614
  • Lastpage
    616
  • Abstract
    Measurements are presented of noise in JFET´s at low temperatures (80-200 K) for devices having a low pinch-off voltage. The noise spectra show the presence of several types of generation-recombination g-r processes. Two processes are attributed to traps in the channel. Further, at the lowest temperatures a long plateau, associated with donor transitions, is observed.
  • Keywords
    Charge carrier processes; Electron devices; Fluctuations; Heating; Ionization; Noise generators; Noise measurement; Notice of Violation; Pulse measurements; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1975.18187
  • Filename
    1478022
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1050410