A Wideband 77-GHz, 17.5-dBm Fully Integrated Power Amplifier in Silicon

Author

Komijani, Abbas ; Hajimiri, Ali

Author_Institution

California Inst. of Technol., Pasadena, CA

Volume

41

Issue

8

fYear

2006

Firstpage

1749

Lastpage

1756

Abstract

A 77-GHz, +17.5 dBm power amplifier (PA) with fully integrated 50-Omega input and output matching and fabricated in a 0.12-mum SiGe BiCMOS process is presented. The PA achieves a peak power gain of 17 dB and a maximum single-ended output power of 17.5 dBm with 12.8% of power-added efficiency (PAE). It has a 3-dB bandwidth of 15 GHz and draws 165 mA from a 1.8-V supply. Conductor-backed coplanar waveguide (CBCPW) is used as the transmission line structure resulting in large isolation between adjacent lines, enabling integration of the PA in an area of 0.6 mm². By using a separate image-rejection filter incorporated before the PA, the rejection at IF frequency of 25 GHz is improved by 35 dB, helping to keep the PA design wideband

Keywords

BiCMOS integrated circuits; Ge-Si alloys; coplanar waveguides; field effect MIMIC; millimetre wave power amplifiers; silicon; transmission lines; wideband amplifiers; 0.12 micron; 1.8 V; 15 GHz; 165 mA; 17 dB; 50 ohm; 77 GHz; BiCMOS process; CBCPW; PAE; Si; SiGe; conductor-backed coplanar waveguide; image-rejection filter; peak power gain; power amplifier; power-added efficiency; single-ended output power; transmission line structure; wideband amplifier; Bandwidth; BiCMOS integrated circuits; Broadband amplifiers; Coplanar waveguides; Gain; Germanium silicon alloys; Impedance matching; Power amplifiers; Power generation; Silicon germanium; BiCMOS; SiGe; integrated circuits; microstrip; phased arrays; power amplifiers; radio transmitters; silicon; silicon germanium;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2006.877258

Filename

1661751