Title :
A Wideband 77-GHz, 17.5-dBm Fully Integrated Power Amplifier in Silicon
Author :
Komijani, Abbas ; Hajimiri, Ali
Author_Institution :
California Inst. of Technol., Pasadena, CA
Abstract :
A 77-GHz, +17.5 dBm power amplifier (PA) with fully integrated 50-Omega input and output matching and fabricated in a 0.12-mum SiGe BiCMOS process is presented. The PA achieves a peak power gain of 17 dB and a maximum single-ended output power of 17.5 dBm with 12.8% of power-added efficiency (PAE). It has a 3-dB bandwidth of 15 GHz and draws 165 mA from a 1.8-V supply. Conductor-backed coplanar waveguide (CBCPW) is used as the transmission line structure resulting in large isolation between adjacent lines, enabling integration of the PA in an area of 0.6 mm2. By using a separate image-rejection filter incorporated before the PA, the rejection at IF frequency of 25 GHz is improved by 35 dB, helping to keep the PA design wideband
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; coplanar waveguides; field effect MIMIC; millimetre wave power amplifiers; silicon; transmission lines; wideband amplifiers; 0.12 micron; 1.8 V; 15 GHz; 165 mA; 17 dB; 50 ohm; 77 GHz; BiCMOS process; CBCPW; PAE; Si; SiGe; conductor-backed coplanar waveguide; image-rejection filter; peak power gain; power amplifier; power-added efficiency; single-ended output power; transmission line structure; wideband amplifier; Bandwidth; BiCMOS integrated circuits; Broadband amplifiers; Coplanar waveguides; Gain; Germanium silicon alloys; Impedance matching; Power amplifiers; Power generation; Silicon germanium; BiCMOS; SiGe; integrated circuits; microstrip; phased arrays; power amplifiers; radio transmitters; silicon; silicon germanium;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2006.877258
