Title :
Effects of ionizing radiation on short-channel thin-Oxide (200-Å) MOSFET´s
Author :
Share, S. ; Martin, R.A.
Author_Institution :
Harry Diamond Laboratories, Adelphi, Md.
fDate :
8/1/1975 12:00:00 AM
Abstract :
The effect of ionizing radiation on n-channel MOSFET´s with channel lengths ranging from 1.0 to 9.3 µm and gate oxides 200 Å thick was investigated. Irradiation to 106rads(Si) resulted in an increased shift of the threshold voltage as the channel length was shortened with those devices having channel lengths 2 µm continuing to operate in the enhancement mode.
Keywords :
Annealing; Capacitors; Circuit testing; Ionizing radiation; MOSFET circuits; Resistors; Silicon; Temperature; Threshold voltage; Voltage control;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1975.18190
