• DocumentCode
    1050440
  • Title

    Effects of ionizing radiation on short-channel thin-Oxide (200-Å) MOSFET´s

  • Author

    Share, S. ; Martin, R.A.

  • Author_Institution
    Harry Diamond Laboratories, Adelphi, Md.
  • Volume
    22
  • Issue
    8
  • fYear
    1975
  • fDate
    8/1/1975 12:00:00 AM
  • Firstpage
    619
  • Lastpage
    620
  • Abstract
    The effect of ionizing radiation on n-channel MOSFET´s with channel lengths ranging from 1.0 to 9.3 µm and gate oxides 200 Å thick was investigated. Irradiation to 106rads(Si) resulted in an increased shift of the threshold voltage as the channel length was shortened with those devices having channel lengths 2 µm continuing to operate in the enhancement mode.
  • Keywords
    Annealing; Capacitors; Circuit testing; Ionizing radiation; MOSFET circuits; Resistors; Silicon; Temperature; Threshold voltage; Voltage control;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1975.18190
  • Filename
    1478025
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1050440