DocumentCode
1050628
Title
Liquid phase epitaxy of GaP by a temperature difference method under controlled vapor pressure
Author
Nishizawa, Jun-ichi ; Okuno, Yasuo
Author_Institution
Tohoku University, Sendai, Japan
Volume
22
Issue
9
fYear
1975
fDate
9/1/1975 12:00:00 AM
Firstpage
716
Lastpage
721
Abstract
A series of experiments have been done in which the properties of GaP grown by liquid phase epitaxy (LPE) have been varied by providing an additional source of phosphorus via the vapor phase. The quality of the crystals, as judged from gross defect features observed in etched cross sections, is a function of the amount of phosphorus added to the vapor phase.
Keywords
Crystals; Epitaxial growth; Etching; Gallium arsenide; Helium; Pressure control; Stacking; Surface morphology; Temperature control; Tungsten;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1975.18209
Filename
1478044
Link To Document