• DocumentCode
    1050662
  • Title

    High-Density and Low-Leakage-Current MIM Capacitor Using Stacked \\hbox {TiO}_{2}/\\hbox {ZrO}_{2} Insulators

  • Author

    Lin, S.H. ; Chiang, K.C. ; Chin, Albert ; Yeh, F.S.

  • Author_Institution
    Dept. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu
  • Volume
    30
  • Issue
    7
  • fYear
    2009
  • fDate
    7/1/2009 12:00:00 AM
  • Firstpage
    715
  • Lastpage
    717
  • Abstract
    We have fabricated high-kappa Ni/TiO2/ZrO2/TiN metal-insulator-metal (MIM) capacitors. A low leakage current of 8 times 10-8 A/cm2 at 125degC was obtained with a high 38- fF/mum2 capacitance density and better than the ZrO2 MIM capacitors. The excellent device performance is due to the lower electric field in 9.5-nm-thick TiO2/ZrO2 devices to decrease the leakage current and to a higher kappa value of 58 for TiO2 as compared with that of ZrO2 to preserve the high capacitance density.
  • Keywords
    MIM devices; capacitance; capacitors; dielectric materials; high-k dielectric thin films; leakage currents; nickel; titanium compounds; zirconium compounds; Ni-TiO2-ZrO2-TiN; capacitance density; high density capacitor; high-kappa metal-insulator-metal capacitor; low leakage current MIM capacitor; size 9.5 nm; stacked insulators; temperature 125 degC; $hbox{TiO}_{2}$ ; $hbox{ZrO}_{2}$; high $kappa$; metal–insulator–metal (MIM);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2009.2022775
  • Filename
    5061532
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1050662