Title :
Thermal Stability Improvement of Ni–Germano silicide Utilizing Ni–Pd Alloy for Nanoscale CMOS Technology
Author :
Kim, Yong-Jin ; Oh, Soon-Young ; Yun, Jang-Gn ; Lee, Won-Jae ; Zhang, Ying-Ying ; Zhong, Zhun ; Jung, Soon-Yen ; Ji, Hee-Hwan ; Cha, Han-Seob ; Kim, Yeong-Cheol ; Wang, Jin-Suk ; Lee, Hi-Deok
Author_Institution :
Chungnam Nat. Univ., Daejeon
fDate :
7/1/2007 12:00:00 AM
Abstract :
In this paper, thermally stable Ni-germanosilicide technology utilizing Ni-Pd alloy and Co/TiN capping layer (Ni-Pd/Co/TiN tri-layer) is proposed for high performance strained-Si CMOS technology. The proposed Ni-germanosilicide technology exhibits low temperature silicidation with a wide temperature window for rapid thermal process (RTP). Moreover, sheet resistance shows stable characteristics in spite of the high temperature postsilicidation annealing up to 700 for 30 min. In addition, the surface of Ni-Pd/Co/TiN structure is much smoother than that of Ni/Co/TiN structure for both before and after the postsilicidation annealing. Therefore, the Ni-germanosilicide using the Ni-Pd/Co/TiN tri-layer is highly promising for future SiGe based nanoscale CMOS technology.
Keywords :
CMOS integrated circuits; Ge-Si alloys; annealing; nickel; semiconductor materials; semiconductor-metal boundaries; thermal stability; Ni-GeSi; high temperature postsilicidation annealing; nanoscale CMOS technology; rapid thermal process; sheet resistance; thermal stability; CMOS technology; Cobalt alloys; Rapid thermal annealing; Rapid thermal processing; Silicidation; Silicides; Surface resistance; Temperature; Thermal stability; Tin alloys; Ni–Pd alloy; Ni–Pd/Co/TiN tri-layer; Ni–germanosilicide; SiGe; strained-Si; thermal stability;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2007.897084
