DocumentCode
1050710
Title
SnO2 Nanorods Prepared by Inductively Coupled Plasma-Enhanced Chemical Vapor Deposition
Author
Lee, Y.C. ; Tan, O.K. ; Huang, Hui ; Tse, M.S. ; Lau, H.W.
Author_Institution
Nanyang Technol. Univ., Singapore
Volume
6
Issue
4
fYear
2007
fDate
7/1/2007 12:00:00 AM
Firstpage
465
Lastpage
468
Abstract
SnO2 nanorods were successfully deposited on substrate by inductively coupled plasma-enhanced chemical vapor deposition (PECVD) using dibutyltin diacetate (DBTDA) as the precursor. Each of the SnO2 nanorods in situ grown under catalyst- and template-free growth condition and without any substrate heating was found to be [110] oriented single crystal. These needle-shaped nanorods have an average diameter between 5 and 16 nm and a length of 160 to 250 nm from TEM observation. Substrate distance and RF power showed notable effects on the formation of SnO2 nanorods.
Keywords
nanostructured materials; nanotechnology; plasma CVD; semiconductor growth; semiconductor materials; tin compounds; transmission electron microscopy; PECVD; RF power; Si - Surface; SiO2-Si - Interface; SiO2/Si substrate; SnO2 - Binary; SnO2 nanorods; TEM; [110] oriented single crystal; inductively coupled plasma-enhanced chemical vapor deposition; needle-shaped nanorods; size 160 nm to 250 nm; size 5 nm to 16 nm; substrate distance; Chemical vapor deposition; Heating; Plasma chemistry; Plasma materials processing; Plasma temperature; Radio frequency; Semiconductor materials; Semiconductor nanostructures; Substrates; Thermal spraying; $hbox{SnO}_{2}$ ; Nanorods; plasma- enhanced chemical vapor deposition (PECVD);
fLanguage
English
Journal_Title
Nanotechnology, IEEE Transactions on
Publisher
ieee
ISSN
1536-125X
Type
jour
DOI
10.1109/TNANO.2007.897870
Filename
4268340
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