DocumentCode
1050753
Title
High-Temperature Continuous-Wave Single-Mode Operation of 1.3- 
m p-Doped InAs–GaAs Quantum-Dot VCSELs
Author
Xu, D.W. ; Yoon, S.F. ; Tong, C.Z. ; Zhao, L.J. ; Ding, Y. ; Fan, W.J.
Author_Institution
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Volume
21
Issue
17
fYear
2009
Firstpage
1211
Lastpage
1213
Abstract
In this letter, we have demonstrated continuous-wave single-mode operation of 1.3-mum InAs-GaAs quantum-dot (QD) vertical-cavity surface-emitting lasers (VCSELs) with p-type modulation-doped QD active region from 20degC to 60degC. The highest output power of 0.435 mW and lowest threshold current of 1.2 mA under single-mode operation are achieved. The temperature-dependent output characteristics of QD-VCSELs are investigated. Single-mode operation with a sidemode suppression ratio of 34 dB is observed at room temperature. The critical size of oxide aperture for single-mode operation is discussed.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; semiconductor quantum dots; surface emitting lasers; InAs-GaAs; continuous-wave single-mode operation; quantum-dot VCSELs; sidemode suppression ratio; temperature 20 degC to 60 degC; vertical-cavity surface-emitting lasers; wavelength 1.3 micron; Quantum dot (QD); single-mode; thermal stability; threshold current; vertical-cavity surface-emitting lasers (VCSELs);
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2009.2024220
Filename
5061540
Link To Document