Title :
Vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots
Author :
Blokhin, Sergey A. ; Maleev, Nikolai A. ; Kuzmenkov, Alexander G. ; Sakharov, Alexey V. ; Kulagina, Marina M. ; Shernyakov, Yuri M. ; Novikov, Innokenty I. ; Maximov, Mikhail V. ; Ustinov, Victor M. ; Kovsh, Alexey R. ; Mikhrin, Sergey S. ; Ledentsov, Nik
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg
Abstract :
Molecular beam epitaxy-grown 0.98-mum vertical-cavity surface-emitting lasers (VCSELs) with a three-stack submonolayer (SML) InGaAs quantum-dot (QD) active region and fully doped AlxGa 1-xAs-GaAs DBRs was studied. Large-aperture VCSELs demonstrated internal optical losses less than 0.1% per one pass. Single-mode operation throughout the whole current range was observed for SML QD VCSELs with the tapered oxide apertures diameter less than 2 mum. Devices with 3-mum tapered-aperture showed high single-mode output power of 4 mW and external quantum efficiency of 68% at room temperature
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser modes; molecular beam epitaxial growth; optical losses; quantum dot lasers; semiconductor growth; surface emitting lasers; 0.98 mum; 3 mum; 4 mW; 68 percent; AlGaAs-GaAs; AlGaAs-GaAs DBR; InGaAs; InGaAs quantum dot; VCSEL; external quantum efficiency; internal optical loss; molecular beam epitaxy; single-mode operation; submonolayer; vertical-cavity surface-emitting lasers; Apertures; Indium gallium arsenide; Molecular beam epitaxial growth; Optical losses; Power generation; Quantum dot lasers; Quantum dots; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers; Distributed Bragg reflector (DBR); internal optical losses; quantum dot (QD); single-mode; thermal resistance; vertical-cavity surface-emitting laser (VCSEL);
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2006.880125
