• DocumentCode
    1050770
  • Title

    A rational consideration of space charge

  • Author

    Boggs, Steven

  • Author_Institution
    Electr. Insulation Res. Center, Connecticut Univ., Storrs, CT, USA
  • Volume
    20
  • Issue
    4
  • fYear
    2004
  • Firstpage
    22
  • Lastpage
    27
  • Abstract
    Space charge formation and its increase with field under DC conditions is not a mystical phenomenon. The increase in space charge with applied field is an obvious and inevitable result of the interaction of field-dependent current density with spatially inhomogeneous resistivity. For common polymeric dielectrics, the current density makes a transition from a linear function of field to an exponential function of field at around 10 kV/mm. This causes a similar transition in the sample space charge in the same field region. However, this transition has no obvious connection with aging, and if it does prove to have a connection, the driving force is the rapidly increasing current density and not the space charge, which is a result thereof. As to the issue of the accuracy of space charge measurements, it may be more important to focus on providing a physical mechanism for 1-eV deep traps at an average separation of 3 nm within a polymeric dielectric. This would bring about the ability to engineer important dielectric properties as well as improved understanding of the physical basis of aging and other important phenomena in dielectrics.
  • Keywords
    current density; dielectric materials; electric breakdown; electrical resistivity; polymers; space charge; 1 eV; aging; exponential function; field-dependent current density; linear function; polymeric dielectric; polymeric dielectrics; space charge measurements; spatially inhomogeneous resistivity; Aging; Charge measurement; Conductivity; Current density; Current measurement; Dielectric measurements; Electric breakdown; Oxidation; Polymers; Space charge;
  • fLanguage
    English
  • Journal_Title
    Electrical Insulation Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    0883-7554
  • Type

    jour

  • DOI
    10.1109/MEI.2004.1318836
  • Filename
    1318836