GaAs—(Ga,Al) As double heterostructure light emitting diode

Double heterostructure light emitting diodes of GaAs- (Ga, Al)As have been developed for use as high radiance sources. The light is collected through a small window parallel to the emitting junction plane using a selective diffusion method for local contact. The external power efficiency is about 1 percent and the rise and fall time of the diodes is about 10 ns. Relatively constant optical output at current densities of 1800 A/cm²have so far been obtained for several thousand hours.