Title :
A wide-band NMOS balanced modulator/amplifier which uses 1- mu m transistors for linearity
Author :
Garverick, Steven L. ; Sodini, Charles G.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
Abstract :
The saturated drain current of short-channel (1 mu m) NMOS transistors is nearly linear with gate drive. A wideband balanced modulator/amplifier which exploits this property to achieve low distortion is described. Operated with a 5-V power supply, the circuit has a gain of 10 with respect to the modulating input, an intrinsic 3-dB bandwidth near 100 MHz, and nonlinearity less than 0.5% for a voltage swing of +or-2 V. This input can serve as modulation for a square wave carrier with equally good linearity.<>
Keywords :
field effect integrated circuits; modulators; wideband amplifiers; 1 micron; gate drive; linearity; low distortion; modulating input; nonlinearity; saturated drain current; square wave carrier; voltage swing; wide-band NMOS balanced modulator/amplifier; Broadband amplifiers; Circuits; Degradation; Gain control; Linearity; MOS devices; MOSFETs; Power supplies; Signal generators; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
