Title :
Higher power InGaAs-GaAs-InGaP distributed feedback buried heterostructure strained quantum well lasers grown by three step MOVPE
Author :
Sin, Y.K. ; Horikawa, H. ; Nakajima, Masahiro ; Kamijoh, T.
Author_Institution :
Oki Electr. Ind. Co. Ltd., Tokyo, Japan
Abstract :
The first demonstration of distributed feedback InGaAs-GaAs buried heterostructure strained quantum well lasers with In0.49Ga0.51P cladding layers entirely grown by a three step MOVPE process is reported. Uncoated distributed feedback buried heterostructure lasers with a pn InGaP current blocking junction on a p+-GaAs substrate show a low laser threshold of 3.2 mA and a high output power of 45 mW both measured CW at RT.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 3.2 mA; 45 mW; CW; CW operation; In 0.49Ga 0.51P cladding layers; InGaAs-GaAs-InGaP; MOVPE; RT; buried heterostructure; distributed feedback; high power laser; laser threshold; output power; room temperature; semiconductors; strained quantum well lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930174
