• DocumentCode
    1050873
  • Title

    Higher power InGaAs-GaAs-InGaP distributed feedback buried heterostructure strained quantum well lasers grown by three step MOVPE

  • Author

    Sin, Y.K. ; Horikawa, H. ; Nakajima, Masahiro ; Kamijoh, T.

  • Author_Institution
    Oki Electr. Ind. Co. Ltd., Tokyo, Japan
  • Volume
    29
  • Issue
    3
  • fYear
    1993
  • Firstpage
    253
  • Lastpage
    255
  • Abstract
    The first demonstration of distributed feedback InGaAs-GaAs buried heterostructure strained quantum well lasers with In0.49Ga0.51P cladding layers entirely grown by a three step MOVPE process is reported. Uncoated distributed feedback buried heterostructure lasers with a pn InGaP current blocking junction on a p+-GaAs substrate show a low laser threshold of 3.2 mA and a high output power of 45 mW both measured CW at RT.
  • Keywords
    III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 3.2 mA; 45 mW; CW; CW operation; In 0.49Ga 0.51P cladding layers; InGaAs-GaAs-InGaP; MOVPE; RT; buried heterostructure; distributed feedback; high power laser; laser threshold; output power; room temperature; semiconductors; strained quantum well lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930174
  • Filename
    277154
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1050873