DocumentCode
1050885
Title
Optimized Asymmetric Double Quantum Well for High Electric-Field-Sensitivity Electroabsorption: Excitonic Mixing Effects
Author
Kim, Dong Kwon ; Citrin, D.S.
Author_Institution
Georgia Inst. of Technol. Atlanta, Atlanta
Volume
43
Issue
8
fYear
2007
Firstpage
651
Lastpage
654
Abstract
Asymmetric double quantum wells (ADQWs) are optimized to exhibit maximum optical modulation sensitivity by varying the barrier width, barrier position, and well width. Anticrossing of the two lowest excitons in ADQWs significantly enhances the modulation sensitivity. Consideration of exciton mixing is crucial to obtain accurate estimates of the effects. For a given linewidth of the excitonic peaks, we find optimum structural parameters that exhibit maximum modulation sensitivity. Values dalpha / dE ~ 6.51 x 104 kV-1of of at 4.2 K and ~1.25 x 103 kV-1of at 298 K are predicted in GaAs-based ADQWs. The result provides new design guidelines in fabricating high-sensitivity QW electroabsorption modulators.
Keywords
III-V semiconductors; electroabsorption; excitons; gallium arsenide; infrared spectra; semiconductor quantum wells; GaAs; asymmetric double quantum well; barrier position; barrier width; excitonic mixing effects; high electric-field-sensitivity electroabsorption; maximum optical modulation sensitivity; temperature 298 K; temperature 4.2 K; well width; Absorption; Excitons; Guidelines; Helium; Optical fiber communication; Optical mixing; Optical modulation; Optical sensors; Quantum wells; Structural engineering; Asymmetric double quantum wells (ADQWs); exciton mixing; optical absorption modulation;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.2007.900265
Filename
4268357
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