• DocumentCode
    1050901
  • Title

    InP/InGaAs double-heterojunction bipolar transistor with step-graded InGaAsP collector

  • Author

    Kurishima, Kenji ; Nakajima, Hiromasa ; Kobayashi, Takehiko ; Matsuoka, Yasutaka ; Ishibashi, Takayuki

  • Author_Institution
    NTT LSI Labs., Kanagawa, Japan
  • Volume
    29
  • Issue
    3
  • fYear
    1993
  • Firstpage
    258
  • Lastpage
    260
  • Abstract
    An MOCVD-grown InP/InGaAs double-heterojunction bipolar transistor with a step-graded InGaAsP collector is described. This transistor allows high injection current densities over 2.9*105 A/cm2, which suggests no significant current blocking related to the wide-gap InP layers. A cutoff frequency of 155 GHz and a maximum oscillation frequency of 90 GHz are obtained at the collector current density of 1.6*105 A/cm2.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor epitaxial layers; semiconductor growth; solid-state microwave devices; vapour phase epitaxial growth; 155 GHz; 90 GHz; DHBT; InP-InGaAs-InGaAsP; MOCVD-grown; cutoff frequency; double-heterojunction bipolar transistor; f T; f max; high injection current densities; maximum oscillation frequency; semiconductors; step-graded InGaAsP collector; wide-gap InP layers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930177
  • Filename
    277157
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1050901