Title :
InP/InGaAs double-heterojunction bipolar transistor with step-graded InGaAsP collector
Author :
Kurishima, Kenji ; Nakajima, Hiromasa ; Kobayashi, Takehiko ; Matsuoka, Yasutaka ; Ishibashi, Takayuki
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
Abstract :
An MOCVD-grown InP/InGaAs double-heterojunction bipolar transistor with a step-graded InGaAsP collector is described. This transistor allows high injection current densities over 2.9*105 A/cm2, which suggests no significant current blocking related to the wide-gap InP layers. A cutoff frequency of 155 GHz and a maximum oscillation frequency of 90 GHz are obtained at the collector current density of 1.6*105 A/cm2.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor epitaxial layers; semiconductor growth; solid-state microwave devices; vapour phase epitaxial growth; 155 GHz; 90 GHz; DHBT; InP-InGaAs-InGaAsP; MOCVD-grown; cutoff frequency; double-heterojunction bipolar transistor; f T; f max; high injection current densities; maximum oscillation frequency; semiconductors; step-graded InGaAsP collector; wide-gap InP layers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930177
