Title :
High efficiency high-speed photodetection in a monolithically integratable InGaAs/InP MQW laser structure at 1.5 mu m
Author :
McGreer, K.A. ; Charbonneau, S. ; Davies, Mike ; Aers, G. ; Takasaki, Brian ; Landheer, D. ; Moss, D. ; Dion, M. ; Delage, A.
Author_Institution :
National Research Council, Ottawa, Ont., Canada
Abstract :
Time-resolved photocurrent measurements in a reverse biased InGaAs/InP ridge waveguide multiquantum well pin laser structure at 1.54 mu m are reported. The pulse response of this monolithically integratable detector is approximately 150 ps FWHM with an internal quantum efficiency of approximately 100% at reverse bias voltages of approximately 5 V.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; photodetectors; semiconductor lasers; 1.5 to 1.54 micron; 100 percent; 150 ps; 5 V; InGaAs-InP; MQW laser structure; high-speed photodetection; internal quantum efficiency; lasers as photodetectors; monolithically integratable detector; multiquantum well pin laser structure; photonic circuits; pulse response; reverse bias voltages; reverse biased laser; ridge waveguide laser; semiconductors; time resolved photocurrent measurements;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930185
