Title :
Application of high-quality SiO2 grown by multipolar ECR source to Si/SiGe MISFET
Author :
Sung, K.T. ; Li, W.Q. ; Li, S.H. ; Pang, Stella W. ; Bhattacharya, P.K.
Author_Institution :
Michigan Univ., Ann Arbor, MI, USA
Abstract :
A 5 nm-thick SiO2 gate was grown on an Si (p+)/Si0.8Ge0.2 modulation-doped heterostructure at 26 degrees C with an oxygen plasma generated by a multipolar electron cyclotron resonance source. The ultrathin oxide has breakdown field >12 MV/cm and fixed charge density approximately 3*1016 cm-2. Leakage current as low as 1 mu A was obtained with the gate biased at 4 V. The MISFET with 0.25*25 mu m2 gate shows maximum drain current of 41.6 mA/mm and peak transconductance of 21 mS/mm.
Keywords :
Ge-Si alloys; chemical beam epitaxial growth; elemental semiconductors; insulated gate field effect transistors; oxidation; semiconductor epitaxial layers; silicon; silicon compounds; 1 muA; 25 micron; 26 C; 4 V; 5 nm; MISFET; MOSFET; SiO 2 gate; SiO 2 gate dielectric; SiO 2-Si-SiGe; breakdown field; drain current; fixed charge density; modulation-doped heterostructure; multipolar ECR source; semiconductors; transconductance; ultrathin oxide;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930189
