• DocumentCode
    1051056
  • Title

    p-Channel MOS transistor in indium antimonide

  • Author

    Shappir, J. ; Margalit, S. ; Kidron, I.

  • Author_Institution
    Technion-Israel Institute of Technology, Haifa, Israel
  • Volume
    22
  • Issue
    10
  • fYear
    1975
  • fDate
    10/1/1975 12:00:00 AM
  • Firstpage
    960
  • Lastpage
    961
  • Abstract
    A p-channel MOS transistor in InSb single crystal, operating at 77 K, is described. The source and drain are defined by etching a mesa structure in a cadmium diffused p layer into a tellurium-doped InSb substrate. The gate is formed by evaporation of chromium gold on top of a layer of SiO2, deposited at 215°C. The MOS transistor is characterized by a threshold voltage of -3 V and an effective hole mobility of 330 cm2. V-1.s-1.
  • Keywords
    Breakdown voltage; Chromium; Electron traps; Etching; Gold; Indium; MOSFETs; Substrates; Threshold voltage; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1975.18249
  • Filename
    1478084
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1051056