DocumentCode
1051065
Title
Use of drain capacitance—Voltage characteristics as a process control tool for the threshold voltage of Silicon gate MOSFET´s
Author
Agatsuma, TAkashi ; Morita, Jukichi
Author_Institution
Hitachi, Ltd., Kodaira, Tokyo, Japan
Volume
22
Issue
10
fYear
1975
fDate
10/1/1975 12:00:00 AM
Firstpage
961
Lastpage
962
Keywords
Annealing; Capacitance-voltage characteristics; Control systems; Electron devices; Intrusion detection; MOSFETs; Process control; Silicon; Threshold voltage; Voltage control;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1975.18250
Filename
1478085
Link To Document