Title :
Use of drain capacitance—Voltage characteristics as a process control tool for the threshold voltage of Silicon gate MOSFET´s
Author :
Agatsuma, TAkashi ; Morita, Jukichi
Author_Institution :
Hitachi, Ltd., Kodaira, Tokyo, Japan
fDate :
10/1/1975 12:00:00 AM
Keywords :
Annealing; Capacitance-voltage characteristics; Control systems; Electron devices; Intrusion detection; MOSFETs; Process control; Silicon; Threshold voltage; Voltage control;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1975.18250
