Title :
Switching in Nb—Nb2O6—Nb devices with doped Nb2O5amorphous films
Author :
Lalevic, B. ; Fuschillo, N. ; Slusark, W., Jr.
Author_Institution :
Rutgers University, New Brunswick, N. J.
fDate :
10/1/1975 12:00:00 AM
Abstract :
Switching properties of Nb-Nb2O5-Nb devices with doped Nb2O5amorphous films were studied as a function of applied voltage and temperature. A continuous recording of the switching process made possible the determination of switching parameters as a function of small voltage increments. Using this technique, it is found that switching occurs within 2.5 mV with a delay time > 1 ms. A switching device of this type can support an input power of ∼1 W.
Keywords :
Amorphous materials; Counting circuits; Delay effects; Electrodes; Niobium; Sputtering; Temperature; Thermal conductivity; Thin film devices; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1975.18253
