A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput

Author

Lee, Kwang-Jin ; Cho, Beak-Hyung ; Cho, Woo-Yeong ; Kang, Sangbeom ; Choi, Byung-Gil ; Oh, Hyung-Rok ; Lee, Chang-Soo ; Kim, Hye-Jin ; Park, Joon-min ; Wang, Qi ; Park, Mu-Hui ; Ro, Yu-Hwan ; Choi, Joon-Yong ; Kim, Ki-Sung ; Kim, Young-Ran ; Shin, In-Cheo

Author_Institution

Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do

Volume

43

Issue

1

fYear

2008

Firstpage

150

Lastpage

162

Abstract

A 512 Mb diode-switch PRAM has been developed in a 90 nm CMOS technology. The vertical diode-switch using the SEG technology has achieved minimum cell size and disturbance-free core operation. A core configuration, read/write circuit techniques, and a charge-pump system for the diode-switch PRAM are proposed. The 512 Mb PRAM has achieved read throughput of 266 MB/s through the proposed schemes. The write throughput was 0.54 MB/s in internal x2 write mode, and increased to 4.64 MB/s with x16 accelerated write mode at 1.8 V supply.

Keywords

CMOS memory circuits; random-access storage; semiconductor diodes; semiconductor switches; CMOS technology; SEG technology; bit rate 266 Mbit/s; charge-pump system; core configuration; diode-switch PRAM; disturbance-free core operation; read throughput; read-write circuit techniques; size 90 nm; vertical diode-switch; voltage 1.8 V; CMOS technology; Charge pumps; Circuits; Diodes; Electrodes; Material storage; Phase change random access memory; Random access memory; Throughput; Voltage; Charge pump; MOS-switch; SEG technology; data endurance; data retention; diode-switch; phase change random access memory (PRAM); phase-change memory; slow-quench; write-verify;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2007.908001

Filename

4443196