A GaAs MCM power amplifier of 3.6 V operation with high efficiency of 49% for 0.9 GHz digital cellular phone systems

Author

Tateoka, Kazuki ; Sugimura, Akihisa ; Furukawa, Hidetoshi ; Yoshikawa, Noriyuki ; Kanazawa, Kunihiko

Author_Institution

Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan

Volume

43

Issue

11

fYear

1995

fDate

11/1/1995 12:00:00 AM

Firstpage

2539

Lastpage

2542

Abstract

An extremely small GaAs PA (power amplifier) has been implemented using AlN multilayer MCM for 0.9 GHz digital cellular phones. The present PA exhibited high efficiency of 49% with drain supply voltage as low as 3.6 V. This PA was designed to provide matching circuits with the maximum gain at the input side and the minimum intermodulation distortion at the output side. Nonlinear simulation result verifies that this matching condition provides the lowest π/4-shift QPSK distortion and indicates that the phase shift of the amplifier is mainly caused by source-drain resistance

Keywords

III-V semiconductors; UHF power amplifiers; cellular radio; cordless telephone systems; digital radio; gallium arsenide; impedance matching; intermodulation distortion; multichip modules; quadrature phase shift keying; π/4-shift QPSK distortion; 0.9 GHz; 3.6 V; 49 percent; AlN; GaAs; MCM power amplifier; digital cellular phone systems; drain supply voltage; efficiency; matching circuits; matching condition; maximum gain; minimum intermodulation distortion; multilayer MCM; source-drain resistance; Cellular phones; Circuit simulation; Gallium arsenide; High power amplifiers; Intermodulation distortion; Low voltage; Nonhomogeneous media; Operational amplifiers; Power amplifiers; Quadrature phase shift keying;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.473175

Filename

473175