DocumentCode :
1051167
Title :
Linear networks based on transistors
Author :
Vittoz, E.A. ; Arreguit, X.
Author_Institution :
Centre Suisse d´Electron. et de Microtech., Neuchatel, Switzerland
Volume :
29
Issue :
3
fYear :
1993
Firstpage :
297
Lastpage :
299
Abstract :
Any network of linear resistors in which only currents are considered can be implemented solely by MOS transistors. Values are controlled by sizes of transistors in the general case, and by their gate voltage for weak inversion. The voltage range is compressed and the concept of virtual ground facilitates the extraction of any current flowing to ground. An edge-detecting silicon retina is described as an example of application.
Keywords :
field effect transistor circuits; insulated gate field effect transistors; linear network synthesis; network parameters; MOS transistors; edge-detecting silicon retina; gate voltage; linear resistors; sizes; virtual ground; voltage range; weak inversion;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19930203
Filename :
277183
Link To Document :
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