Title :
Fe-doped InP semi-insulating buried heterostructure for high speed and high power operations in directly modulated semiconductor laser
Author :
Kim, D. ; Shim, J. ; Jang, D. ; Eo, Y.
Author_Institution :
Dept. of Electr. & Comput. Eng., Hanyang Univ., Kyunggi-Do, South Korea
fDate :
7/22/2004 12:00:00 AM
Abstract :
A buried heterostructure based on Fe-doped InP semi-insulating layers is optimised for both high output power and large modulation bandwidth operations up to 70°C in a 10 Gbit/s directly modulated 1.3 μm InGaAsP/InP distributed feedback laser. The slope efficiency of 0.19 W/A and -3 dB bandwidth of 10 GHz at 1.5 times threshold current is demonstrated experimentally.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; high-speed optical techniques; indium compounds; iron; optical communication equipment; optical modulation; semiconductor lasers; 1.3 micron; 10 GHz; 10 Gbit/s; 3 dB; Fe doped InP semiinsulating buried heterostructure; Fe doped InP semiinsulating layer; InGaAsP-InP:Fe; InGaAsP/InP distributed feedback laser; directly modulated semiconductor laser; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20045467
