Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature

The drift velocity of electrons and holes in silicon has been measured in a large range of the electric fields (from 3 . 10²to 6 . 10⁴V/cm) at temperatures up to 430 K. The experimental data have been fitted with a simple formula for the temperatures of interest. The mean square deviation was in all cases less than 3.8 percent. A more general formula has also been derived which allows to obtain by extrapolation drift velocity data at any temperature and electric field.