Title :
Subthreshold slope for insulated gate field-effect transistors
Author_Institution :
IBM System Products Division, Essex Junction, Vt.
fDate :
11/1/1975 12:00:00 AM
Abstract :
An explicit expression has been derived for the subthreshold slope of an insulated gate field-effect transistor. This expression is used to explore the influence of surface band-bending, gate insulator thickness, substrate doping, substrate bias, and temperature.
Keywords :
Circuits; Doping; FETs; Insulation; Niobium; Permittivity; Silicon compounds; Subthreshold current; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1975.18269
