Title :
A modified linear sweep technique for MOS-C generation rate measurements
Author :
Pierret, R.F. ; Small, D.W.
Author_Institution :
Purdue University, West Lafayette, Ind.
fDate :
11/1/1975 12:00:00 AM
Abstract :
A modified linear sweep technique is described which allows one to rapidly determine the carrier generation rate versus semiconductor depletion width dependence exhibited by deeply depleted MOS-C structures. Although requiring more sophisticated instrumentation, the modified procedure is more flexible, more accurate, and less time-consuming than the original technique.
Keywords :
Capacitance; Circuit theory; Instruments; Insulation; Niobium; Notice of Violation; Performance evaluation; Silicon; Solid state circuits; Temperature dependence;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1975.18270
