Title :
First demonstration of 60 GHz-ft GaInP/GaAs HBT IC technology with 28 ps ECL gate delay
Author :
Prasad, S.J. ; Vetanen, B. ; Haynes, C. ; Beers, I. ; Park, Soojin
Author_Institution :
Tektronix Inc., Beaverton, OR, USA
Abstract :
A fully integrated GaInP/GaAs HBT IC process with Schottky diodes, nichrome resistors, MIM capacitors and air-bridge inductors is presented. The HBTs have an fT and fmax of 60 and 45 GHz, respectively. Unloaded ECL gate delays of 28 ps are obtained from ring oscillator measurements. A divide-by-eight prescaler circuit clocks at 12.5 GHz.
Keywords :
bipolar integrated circuits; emitter-coupled logic; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; integrated circuit technology; 28 ps; 45 GHz; 60 GHz; ECL gate delay; GaInP-GaAs; HBT IC process; MIM capacitors; Schottky diodes; air-bridge inductors; divide-by-eight prescaler circuit; nichrome resistors; ring oscillator measurements;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930218
