• DocumentCode
    1051335
  • Title

    First demonstration of 60 GHz-ft GaInP/GaAs HBT IC technology with 28 ps ECL gate delay

  • Author

    Prasad, S.J. ; Vetanen, B. ; Haynes, C. ; Beers, I. ; Park, Soojin

  • Author_Institution
    Tektronix Inc., Beaverton, OR, USA
  • Volume
    29
  • Issue
    3
  • fYear
    1993
  • Firstpage
    320
  • Lastpage
    321
  • Abstract
    A fully integrated GaInP/GaAs HBT IC process with Schottky diodes, nichrome resistors, MIM capacitors and air-bridge inductors is presented. The HBTs have an fT and fmax of 60 and 45 GHz, respectively. Unloaded ECL gate delays of 28 ps are obtained from ring oscillator measurements. A divide-by-eight prescaler circuit clocks at 12.5 GHz.
  • Keywords
    bipolar integrated circuits; emitter-coupled logic; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; integrated circuit technology; 28 ps; 45 GHz; 60 GHz; ECL gate delay; GaInP-GaAs; HBT IC process; MIM capacitors; Schottky diodes; air-bridge inductors; divide-by-eight prescaler circuit; nichrome resistors; ring oscillator measurements;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930218
  • Filename
    277197
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1051335