Title :
High-efficiency high-gain monolithic heterostructure FET amplifier at 31 GHz
Author :
Tserng, Hua-Quen ; Saunier, Paul ; Kao, Y.-C.
Author_Institution :
Texas Instruments Inc., Dallas, TX, USA
Abstract :
A three-stage heterostructure FET monolithic amplifier has achieved a power-added efficiency of 36% with 200 mW output and 18 dB gain at 31 GHz. At a higher drain voltage, the output power increases to 280 mW (with 17.5 dB gain and 31% PAE) at a power density of 0.7 W/mm. The MMIC chip measures 2.63*1.35 mm2 and requires only a single drain bias and a single gate bias.
Keywords :
MMIC; field effect integrated circuits; microwave amplifiers; 17.5 dB; 18 dB; 200 mW; 280 mW; 31 GHz; 31 percent; 36 percent; MMIC chip; drain voltage; power density; power-added efficiency; single drain bias; single gate bias; three-stage heterostructure FET monolithic amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930208
