• DocumentCode
    1051360
  • Title

    High-efficiency high-gain monolithic heterostructure FET amplifier at 31 GHz

  • Author

    Tserng, Hua-Quen ; Saunier, Paul ; Kao, Y.-C.

  • Author_Institution
    Texas Instruments Inc., Dallas, TX, USA
  • Volume
    29
  • Issue
    3
  • fYear
    1993
  • Firstpage
    304
  • Lastpage
    306
  • Abstract
    A three-stage heterostructure FET monolithic amplifier has achieved a power-added efficiency of 36% with 200 mW output and 18 dB gain at 31 GHz. At a higher drain voltage, the output power increases to 280 mW (with 17.5 dB gain and 31% PAE) at a power density of 0.7 W/mm. The MMIC chip measures 2.63*1.35 mm2 and requires only a single drain bias and a single gate bias.
  • Keywords
    MMIC; field effect integrated circuits; microwave amplifiers; 17.5 dB; 18 dB; 200 mW; 280 mW; 31 GHz; 31 percent; 36 percent; MMIC chip; drain voltage; power density; power-added efficiency; single drain bias; single gate bias; three-stage heterostructure FET monolithic amplifier;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930208
  • Filename
    277202
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1051360