DocumentCode
1051364
Title
Sub-picosecond modulation by intersubband transition in ridge waveguide with GaN/AlN quantum wells
Author
Iizuka, N. ; Kaneko, K. ; Suzuki, N.
Author_Institution
Corp. Res. Dev. Center, Toshiba Corp., Kawasaki, Japan
Volume
40
Issue
15
fYear
2004
fDate
7/22/2004 12:00:00 AM
Firstpage
962
Lastpage
963
Abstract
Optical modulation due to the intersubband transition in GaN/AlN multiple quantum wells has been characterised for the first time with a ridge waveguide structure. An ultrafast response of as short as 0.36 ps for the full width at half maximum is reported with 1.55 μm signal and 1.7 μm control wavelengths.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; high-speed optical techniques; optical modulation; optical waveguides; ridge waveguides; semiconductor quantum wells; wide band gap semiconductors; 1.55 micron; 1.7 micron; GaN-AlN; GaN-AlN multiple quantum wells; high-speed optical techniques; intersubband transition; optical modulation; ridge waveguide structure; subpicosecond modulation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20045434
Filename
1318897
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