Title :
Sub-picosecond modulation by intersubband transition in ridge waveguide with GaN/AlN quantum wells
Author :
Iizuka, N. ; Kaneko, K. ; Suzuki, N.
Author_Institution :
Corp. Res. Dev. Center, Toshiba Corp., Kawasaki, Japan
fDate :
7/22/2004 12:00:00 AM
Abstract :
Optical modulation due to the intersubband transition in GaN/AlN multiple quantum wells has been characterised for the first time with a ridge waveguide structure. An ultrafast response of as short as 0.36 ps for the full width at half maximum is reported with 1.55 μm signal and 1.7 μm control wavelengths.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high-speed optical techniques; optical modulation; optical waveguides; ridge waveguides; semiconductor quantum wells; wide band gap semiconductors; 1.55 micron; 1.7 micron; GaN-AlN; GaN-AlN multiple quantum wells; high-speed optical techniques; intersubband transition; optical modulation; ridge waveguide structure; subpicosecond modulation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20045434
