• DocumentCode
    1051436
  • Title

    Graphene-on-Insulator Transistors Made Using C on Ni Chemical-Vapor Deposition

  • Author

    Kedzierski, Jakub ; Hsu, Pei-Lan ; Reina, Alfonso ; Kong, Jing ; Healey, Paul ; Wyatt, Peter ; Keast, Craig

  • Author_Institution
    Lincoln Lab., Massachusetts Inst. of Technol., Lexington, MA
  • Volume
    30
  • Issue
    7
  • fYear
    2009
  • fDate
    7/1/2009 12:00:00 AM
  • Firstpage
    745
  • Lastpage
    747
  • Abstract
    Graphene transistors are made by transferring a thin graphene film grown on Ni onto an insulating SiO2 substrate. The properties and integration of these graphene-on-insulator transistors are presented and compared to the characteristics of devices made from graphitized SiC and exfoliated graphene flakes.
  • Keywords
    CVD coatings; elemental semiconductors; graphene; narrow band gap semiconductors; semiconductor thin films; silicon compounds; thin film transistors; C-SiO2; Ni; chemical vapor deposition; graphene-on-insulator transistor; thin graphene film; Carbon CVD; carbon transistors; chemical-vapor deposition (CVD); epitaxial graphene; graphene; graphene transistors;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2009.2020615
  • Filename
    5061601
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1051436