Title :
Graphene-on-Insulator Transistors Made Using C on Ni Chemical-Vapor Deposition
Author :
Kedzierski, Jakub ; Hsu, Pei-Lan ; Reina, Alfonso ; Kong, Jing ; Healey, Paul ; Wyatt, Peter ; Keast, Craig
Author_Institution :
Lincoln Lab., Massachusetts Inst. of Technol., Lexington, MA
fDate :
7/1/2009 12:00:00 AM
Abstract :
Graphene transistors are made by transferring a thin graphene film grown on Ni onto an insulating SiO2 substrate. The properties and integration of these graphene-on-insulator transistors are presented and compared to the characteristics of devices made from graphitized SiC and exfoliated graphene flakes.
Keywords :
CVD coatings; elemental semiconductors; graphene; narrow band gap semiconductors; semiconductor thin films; silicon compounds; thin film transistors; C-SiO2; Ni; chemical vapor deposition; graphene-on-insulator transistor; thin graphene film; Carbon CVD; carbon transistors; chemical-vapor deposition (CVD); epitaxial graphene; graphene; graphene transistors;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2020615
