Title :
IVA-3 high-speed Schottky-barrier photodiode in LPE InxGa1-xAs for 1.0 µm to 1.1 µm wavelength region
Author :
Lee, T.P. ; Burrus, C.A. ; Pollack, M.A. ; Nahory, R.E.
Author_Institution :
Crawford Hill Laboratory, Bell Laboratories
Abstract :
Summary form only. An abstract of the above-titled article taken from the Device Research Conference (24-26 June 1975, Carleton University, Ottawa, Ont., Canada) is presented.
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1975.18304
