Title :
V-2 reproducible, high carrier concentration implantations of selenium and silicon into GaAs
Author :
Donnelly, J.P. ; Lindley, W.T. ; Hurwitz, C.E.
Author_Institution :
Massachusetts Institute of Technology, Lexington, Mass
Abstract :
Summary form only. An abstract of the above-titled article taken from the Device Research Conference (24-26 June 1975, Carleton University, Ottawa, Ont., Canada) is presented.
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1975.18312
