• DocumentCode
    1051685
  • Title

    V-1 epitaxial regrowth of damage layers created by high dose ion implantation into Si

  • Author

    Sigmon, T.W.

  • Author_Institution
    Hewlett-Packard Laboratories, Palo Alto, Calif
  • Volume
    22
  • Issue
    11
  • fYear
    1975
  • Firstpage
    1065
  • Lastpage
    1065
  • Abstract
    Summary form only. An abstract of the above-titled article taken from the Device Research Conference (24-26 June 1975, Carleton University, Ottawa, Ont., Canada) is presented.
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1975.18313
  • Filename
    1478148
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1051685