Title :
V-1 epitaxial regrowth of damage layers created by high dose ion implantation into Si
Author_Institution :
Hewlett-Packard Laboratories, Palo Alto, Calif
Abstract :
Summary form only. An abstract of the above-titled article taken from the Device Research Conference (24-26 June 1975, Carleton University, Ottawa, Ont., Canada) is presented.
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1975.18313
