• DocumentCode
    1051689
  • Title

    Optimization of Light Extraction Efficiency of III-Nitride LEDs With Self-Assembled Colloidal-Based Microlenses

  • Author

    Ee, Yik-Khoon ; Kumnorkaew, Pisist ; Arif, Ronald A. ; Tong, Hua ; Zhao, Hongping ; Gilchrist, J.F. ; Tansu, Nelson

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
  • Volume
    15
  • Issue
    4
  • fYear
    2009
  • Firstpage
    1218
  • Lastpage
    1225
  • Abstract
    Improvement of light extraction efficiency of InGaN LEDs using colloidal-based SiO2/polystyrene (PS) microlens arrays was demonstrated. The size effect of the SiO2 microspheres and the thickness effect of the PS layer on the light extraction efficiency of III-nitride LEDs were studied. The monolayer rapid convective deposition conditions for SiO2 microspheres were also investigated. Ray tracing simulations show that the use of microlens arrays can lead to increase in light extraction efficiency of InGaN LEDs by 2.64 times. This is consistent with experiments that demonstrated 2.49 times improvement in light extraction utilizing SiO2/PS microlens arrays. The enhancement in light extraction efficiency is attributed to increase in effective photon escape cone due to SiO2/PS microlens arrays, and reduced Fresnel reflection within the photon escape cone due to the grading of refractive index change between GaN/SiO2/PS/air interface.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; integrated optics; light emitting diodes; microlenses; optical arrays; polymers; ray tracing; refractive index; self-assembly; silicon compounds; wide band gap semiconductors; Fresnel reflection; III-nitride LEDs; InGaN; colloids; effective photon escape; light extraction efficiency; microlens arrays; microspheres; monolayer rapid convective deposition; polystyrene; ray tracing simulations; refractive index; self-assembly; Colloid; InGaN quantum wells (QWs); LEDs; light extraction efficiency; microlens arrays;
  • fLanguage
    English
  • Journal_Title
    Selected Topics in Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    1077-260X
  • Type

    jour

  • DOI
    10.1109/JSTQE.2009.2015580
  • Filename
    5061625