Monolithic Integration of a Folded Dipole Antenna With a 24-GHz Receiver in SiGe HBT Technology

Author

Öjefors, Erik ; Sönmez, Ertugrul ; Chartier, Sébastien ; Lindberg, Peter ; Schick, Christoph ; Rydberg, Anders ; Schumacher, Hermann

Author_Institution

Uppsala Univ., Uppsala

Volume

55

Issue

7

fYear

2007

fDate

7/1/2007 12:00:00 AM

Firstpage

1467

Lastpage

1475

Abstract

The integration of an on-chip folded dipole antenna with a monolithic 24-GHz receiver manufactured in a 0.8-mum SiGe HBT process is presented. A high-resistivity silicon substrate (1000 Omega ldr cm) is used for the implemented circuit to improve the efficiency of the integrated antenna. Crosstalk between the antenna and spiral inductors is analyzed and isolation techniques are described. The receiver, including the receive and an optional transmit antenna, requires a chip area of 4.5 mm² and provides 30-dB conversion gain at 24 GHz with a power consumption of 960 mW.

Keywords

MMIC; crosstalk; dipole antennas; heterojunction bipolar transistors; radio receivers; silicon compounds; HBT technology; SiGe - Binary; SiGe - Interface; crosstalk; frequency 24 GHz; gain 30 dB; heterojunction bipolar transistor; high-resistivity silicon substrate; monolithic microwave integrated circuit; on-chip folded dipole antenna; power 960 mW; power consumption; receiver; size 0.8 micron; spiral inductor; Crosstalk; Dipole antennas; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit technology; Manufacturing processes; Monolithic integrated circuits; Receiving antennas; Silicon germanium; Spirals; Dipole antennas; heterojunction bipolar transistors (HBTs); monolithic microwave integrated circuit (MMIC) receivers;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2007.900315

Filename

4268439