DocumentCode :
1051715
Title :
Monolithic Integration of a Folded Dipole Antenna With a 24-GHz Receiver in SiGe HBT Technology
Author :
Öjefors, Erik ; Sönmez, Ertugrul ; Chartier, Sébastien ; Lindberg, Peter ; Schick, Christoph ; Rydberg, Anders ; Schumacher, Hermann
Author_Institution :
Uppsala Univ., Uppsala
Volume :
55
Issue :
7
fYear :
2007
fDate :
7/1/2007 12:00:00 AM
Firstpage :
1467
Lastpage :
1475
Abstract :
The integration of an on-chip folded dipole antenna with a monolithic 24-GHz receiver manufactured in a 0.8-mum SiGe HBT process is presented. A high-resistivity silicon substrate (1000 Omega ldr cm) is used for the implemented circuit to improve the efficiency of the integrated antenna. Crosstalk between the antenna and spiral inductors is analyzed and isolation techniques are described. The receiver, including the receive and an optional transmit antenna, requires a chip area of 4.5 mm2 and provides 30-dB conversion gain at 24 GHz with a power consumption of 960 mW.
Keywords :
MMIC; crosstalk; dipole antennas; heterojunction bipolar transistors; radio receivers; silicon compounds; HBT technology; SiGe - Binary; SiGe - Interface; crosstalk; frequency 24 GHz; gain 30 dB; heterojunction bipolar transistor; high-resistivity silicon substrate; monolithic microwave integrated circuit; on-chip folded dipole antenna; power 960 mW; power consumption; receiver; size 0.8 micron; spiral inductor; Crosstalk; Dipole antennas; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit technology; Manufacturing processes; Monolithic integrated circuits; Receiving antennas; Silicon germanium; Spirals; Dipole antennas; heterojunction bipolar transistors (HBTs); monolithic microwave integrated circuit (MMIC) receivers;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2007.900315
Filename :
4268439
Link To Document :
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