Title :
VI-3 effective recombination velocity at a buried layer to epitaxial interface
Author_Institution :
University of California, Berkeley, Calif.
Abstract :
Summary form only. An abstract of the above-titled article taken from the Device Research Conference (24-26 June 1975, Carleton University, Ottawa, Ont., Canada) is presented.
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1975.18322
