Title :
Determination of Density of States in Amorphous Carbon
Author_Institution :
Emerging Technol. Res. Centre, De Montfort Univ., Leicester
Abstract :
Various methods have been employed before to deduce the density of states (DOS) in amorphous carbon. However, further investigations show that capacitance measurements on a metal-insulator-semiconductor structure are an appropriate way to deduce the DOS. Thus, an analytical formalism, which agrees well with the experimental data, is developed. This paper reports the structures and techniques used to investigate the DOS in amorphous hydrogenated carbon
Keywords :
MIS structures; amorphous semiconductors; carbon compounds; electronic density of states; amorphous hydrogenated carbon; capacitance measurements; density of states; metal-insulator-semiconductor; Amorphous materials; Capacitance measurement; Delay; Frequency; Helium; Paramagnetic resonance; Photonic band gap; Schottky diodes; Semiconductor materials; Space charge; Amorphous hydrogenated carbon; capacitance-voltage; density of states; metal–insulator–semiconductor structures;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.877868
