DocumentCode
1051791
Title
Determination of Density of States in Amorphous Carbon
Author
Paul, S.
Author_Institution
Emerging Technol. Res. Centre, De Montfort Univ., Leicester
Volume
53
Issue
8
fYear
2006
Firstpage
1775
Lastpage
1781
Abstract
Various methods have been employed before to deduce the density of states (DOS) in amorphous carbon. However, further investigations show that capacitance measurements on a metal-insulator-semiconductor structure are an appropriate way to deduce the DOS. Thus, an analytical formalism, which agrees well with the experimental data, is developed. This paper reports the structures and techniques used to investigate the DOS in amorphous hydrogenated carbon
Keywords
MIS structures; amorphous semiconductors; carbon compounds; electronic density of states; amorphous hydrogenated carbon; capacitance measurements; density of states; metal-insulator-semiconductor; Amorphous materials; Capacitance measurement; Delay; Frequency; Helium; Paramagnetic resonance; Photonic band gap; Schottky diodes; Semiconductor materials; Space charge; Amorphous hydrogenated carbon; capacitance-voltage; density of states; metal–insulator–semiconductor structures;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2006.877868
Filename
1661877
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