Title :
Active-Matrix Amorphous-Silicon TFTs Arrays at 180

on Clear Plastic and Glass Substrates for Organic Light-Emitting Displays
Author :
Long, K. ; Kattamis, A.Z. ; Cheng, I.-C. ; Gleskova, H. ; Wagner, S. ; Sturm, J.C. ; Stevenson, M. ; Yu, G. ; O´Regan, M.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ
Abstract :
An amorphous-silicon thin-film transistor (TFT) process with a 180 degC maximum temperature using plasma-enhanced chemical vapor deposition has been developed on both novel clear polymer and glass substrates. The gate leakage current, threshold voltage, mobility, and on/off ratio of the TFTs are comparable with those of standard TFTs on glass with deposition temperature of 300 degC-350 degC. Active-matrix pixel circuits for organic light-emitting displays (LEDs) on both glass and clear plastic substrates were fabricated with these TFTs. Leakage current in the switching TFT is low enough to allow data storage for video graphics array timings. The pixels provide suitable drive current for bright displays at a modest drive voltage. Test active matrices with integrated polymer LEDs on glass showed good pixel uniformity, behaved electrically as expected for the TFT characteristics, and were as bright as 1500 cd/m2
Keywords :
LED displays; amorphous semiconductors; organic light emitting diodes; plasma CVD coatings; polymer films; silicon; substrates; thin film transistors; 180 C; TFT arrays; active-matrix amorphous-silicon; active-matrix pixel circuit; clear plastic substrate; clear polymer substrate; glass substrate; integrated polymer LED; organic light-emitting displays; pixel uniformity; plasma-enhanced chemical vapor deposition; thin-film transistor; video graphics array timing; Active matrix technology; Drives; Glass; Leakage current; Optical arrays; Plasma displays; Plasma temperature; Plastics; Substrates; Thin film transistors; Active matrix; amorphous-silicon; flexible; organic light-emitting display; plastic substrate; thin-film transitor (TFT);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.878028